| abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of optimizing the influence of impurity atoms on the performance of the semiconductor device and a method for manufacturing the same. According to one embodiment, a semiconductor device includes a laminated film including a plurality of electrode layers alternately laminated in a first direction and a plurality of insulating layers. Further, the apparatus includes a columnar portion including a charge storage layer extending in the first direction and a first semiconductor layer in the laminated film. Further, the apparatus is provided on the laminated film and the columnar portion, contains the same impurity atoms as the impurity atoms contained in the first semiconductor layer, and has a concentration gradient of the impurity atoms in the first direction. It is provided with a semiconductor layer or a first insulating film. [Selection diagram] Fig. 1 |