| abstract |
PROBLEM TO BE SOLVED: To improve electrical performance, increase an interconnection density between a chip and a package, save a silicon area, reduce an apparatus cost, and reduce a manufacturing cost in the manufacture of a semiconductor structure. SOLUTION: A conductor pad 102 is formed on a semiconductor die, a seed layer 105 is formed on the conductor pad 102, a first mask layer 109 is defined on the seed layer 105, and the inside of the first mask layer 109 is formed. A silver alloy bump body 101 is formed on the surface. In forming the silver alloy bump body 101, a first cyanide-based bath is prepared. The pH value of the first cyanide bath is controlled in the range of about 6 to about 8, and the semiconductor die is immersed in the first cyanide bath, and the semiconductor die is dipped in about 0.1 ASD (10 A / 10 A /). An electroplating current density of about 0.5 ASD (50 A / m 2 ) is applied from m 2 ). [Selection diagram] FIG. 17 |