| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fb272959740a2231f287ac6bf4d190a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate |
2021-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e5271c99c4095bc398bd88b63953101
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6649c493f5610a936b89f67595f84cc8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_239bf01a515ffdcd7d7ebcfef183bfa8 |
| publicationDate |
2022-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2022002332-A |
| titleOfInvention |
Semiconductor device manufacturing method, substrate processing method, program and substrate processing equipment |
| abstract |
PROBLEM TO BE SOLVED: To provide a technique capable of improving the characteristics of a film formed on a substrate. SOLUTION: (a) a step of supplying a first raw material gas containing a first element to a substrate in a processing chamber, and (b) a substrate containing a first element and having a higher heat than the first raw material gas. A cycle of supplying a second raw material gas having a low decomposition temperature and (c) supplying a reaction gas containing a second element different from the first element to the substrate in this order is performed a predetermined number of times. Thereby, a technique having a step of forming a film containing a first element and a second element on a substrate is provided. [Selection diagram] FIG. 4 |
| priorityDate |
2019-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |