| abstract |
A method of depositing a ruthenium-containing film on a substrate by a periodic deposition process is disclosed. The method may include contacting the substrate with a first gas phase reactant comprising an organometallic precursor, the organometallic precursor from platinum, aluminum, titanium, bismuth, zinc, and combinations thereof. Includes metals selected from the group. The method may also include contacting the substrate with a second gas phase reactant containing ruthenium tetroxide, where the ruthenium-containing membrane is at least one of a ruthenium-platinum alloy or a ternary ruthenium tetroxide. include. A device structure including a ruthenium-containing film deposited by the method of the present disclosure is also disclosed. |