| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-435
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2018-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2021501467-A |
| titleOfInvention |
Gate structure for adjusting effective work function of semiconductor device, semiconductor device with gate structure, and method of forming gate structure |
| abstract |
PROBLEM TO BE SOLVED: To provide a gate structure for adjusting an effective work function of a semiconductor device, a semiconductor device provided with the gate structure, and a method for forming the gate structure. SOLUTION: A gate structure for adjusting an effective work function of a semiconductor device has a gate dielectric on a channel region of the semiconductor device, a first metal nitride in direct contact with the gate dielectric, and an aluminum content of 30. Atomic wt. It comprises a conformal aluminum carbide material layer larger than% and a second metal nitride layer in direct contact with the conformal aluminum (Al) / carbon (C) -containing material layer. The conformal aluminum carbide (Al) layer contains aluminum carbide or Al 4 C 3 , with a maximum aluminum (Al) content of 57 atomic% (at.%) And 3.9 eV to thicknesses below 2.5 nm. It has a work function setting of 5.0 eV. Such a structure can provide metal gate length scaling and resistance benefits below 25 nm for state-of-the-art work function electrodes. [Selection diagram] Fig. 4 |
| priorityDate |
2017-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |