| abstract |
【Theme】 Provided is a method for producing an α-gallium oxide film having an excellent film forming speed at a low cost. SOLUTION: Manufacture of a gallium oxide film in which a mist generated by atomizing or dropletizing a raw material solution is conveyed using a carrier gas, the mist is heated, and the mist is thermally reacted on a substrate to form a film. A method for producing a gallium oxide film, wherein a raw material solution containing at least chloride ions and gallium ions is used as the raw material solution, and the time for heating the mist is 0.002 seconds or more and 6 seconds or less. [Selection diagram] Fig. 1 |