| abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which fluctuations in electrical characteristics due to miniaturization are unlikely to occur. SOLUTION: An oxide semiconductor film including a first region and a pair of second regions facing each other via the first region, a gate insulating film provided on the oxide semiconductor film, and gate insulation. It has a first electrode provided on the film and superimposed on the first region, and the first region is a non-single crystal oxide semiconductor region having a c-axis oriented crystal portion. The pair of second regions is a semiconductor device, characterized in that it is an oxide semiconductor region containing a dopant and having a plurality of crystal portions. [Selection diagram] Fig. 1 |