http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021184465-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdf3b6ced3d7710ec0bc0addb67a1cc9 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1156 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8239 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate | 2021-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f804000d767e858ac40266681d29806b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ec4a5f3b5b74f7867c60d9dc292aa58 |
publicationDate | 2021-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2021184465-A |
titleOfInvention | Semiconductor device |
abstract | PROBLEM TO BE SOLVED: To provide a transistor using an oxide semiconductor film having excellent on-characteristics by reducing the contact resistance between an oxide semiconductor film and a metal film. SOLUTION: A pair of electrodes on an insulating surface, an oxide semiconductor film provided in contact with the pair of electrodes, a gate insulating film on the oxide semiconductor film, and an oxide semiconductor film superimposed via the gate insulating film. A semiconductor device having a gate electrode and a halogen element in a region in contact with an oxide semiconductor film in a pair of electrodes. Further, as a method of including the halogen element in the region in contact with the oxide semiconductor film in the pair of electrodes, plasma treatment in an atmosphere containing fluorine can be used. [Selection diagram] Fig. 1 |
priorityDate | 2019-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 92.