| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73e224665ceb7b15f8e66dfd0ee245c6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2101-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-6572
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-215
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-211 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K39-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-6572
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-353
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-211 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-369
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate |
2020-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3961ff11f9cfe2b0f1545a161469e81d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f68ded175a350b8d5b9362221a81621e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa8bd23c7a024823391de6395c1b7597
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00907b144517f93b49af857ebccbad12 |
| publicationDate |
2021-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2021174900-A |
| titleOfInvention |
Imaging device |
| abstract |
PROBLEM TO BE SOLVED: To provide an imaging device including a photoelectric conversion element having improved reliability. An imaging device 100 includes a photoelectric conversion element 10 including a first electrode 2, a second electrode 6, and a photoelectric conversion layer 4 located between the first electrode 2 and the second electrode 6. .. The photoelectric conversion layer 4 includes a first material, a second material, and a third material. The first material is a fullerene or a fullerene derivative. The second material is a donor organic semiconductor material. The visible light average extinction coefficient of the third material is smaller than the visible light average extinction coefficient of the first material. [Selection diagram] Fig. 1 |
| priorityDate |
2020-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |