| abstract |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device suitable for miniaturization and high density. SOLUTION: A first transistor is provided on a semiconductor substrate, and above the first transistor, It has a second transistor with an oxide semiconductor, has a capacitive element above the second transistor, and the capacitive element has a first conductor, a second conductor, and an insulator. The second conductor covers the side surface of the first conductor via an insulator. [Selection diagram] Fig. 1 |