http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021158278-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a665d61597c2731ab4130971ee397dc9 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 |
| filingDate | 2020-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4bac6a1bf6ba768f057dacb0daa02cff |
| publicationDate | 2021-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2021158278-A |
| titleOfInvention | Polishing composition, manufacturing method of polishing composition, polishing method and manufacturing method of semiconductor substrate |
| abstract | PROBLEM TO BE SOLVED: To provide a means capable of polishing an object to be polished containing polycrystalline silicon at a high polishing speed. A polishing composition containing abrasive grains, a polishing rate improving agent, and a dispersion medium, wherein the zeta potential of the abrasive grains is positive, and the polishing rate improving agent is sulfurous acid or thiosulfuric acid. , A polishing composition which is an inorganic compound selected from the group consisting of dithionous acid, disulfurous acid and salts thereof and having a pH of less than 7.0. [Selection diagram] None |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023080014-A1 |
| priorityDate | 2020-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 104.