http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021122066-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-15
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filingDate 2021-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68689a937821c38f6ab6086b434727b9
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publicationDate 2021-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2021122066-A
titleOfInvention Through silicon via substrate
abstract PROBLEM TO BE SOLVED: To provide a through electrode substrate having a structure in which the capacitance of a capacitor can be easily controlled. SOLUTION: A through electrode substrate is a substrate having a first surface and a second surface on the opposite side to the first surface, a through electrode conducting the first surface and the second surface, and a second surface of the substrate. Between the first conductive layer arranged on one surface and electrically connected to the through electrode, the first insulating layer arranged on the first conductive layer, and the first conductive layer and the first insulating layer. An arranged intermediate layer is provided, the intermediate layer is a layer containing at least one of titanium (Ti), nickel (Ni), and gold (Au), and the first insulating layer contains carbon. It is silicon nitride. [Selection diagram] Fig. 2
priorityDate 2017-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 31.