| abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the number of steps is reduced by forming a semiconductor film and an electrode of a transistor through the same process. The first electrode and the semiconductor layer are provided on the same insulating film 101 and include at least a transistor having a transistor having a semiconductor layer connected to the second electrode, and indium and zinc. , Gallium, oxygen, and the first electrode is a semiconductor device connected to a wiring. [Selection diagram] FIG. 10 |