| abstract |
PROBLEM TO BE SOLVED: To provide a uniform silicon carbide crystal manufacturing apparatus. A uniform silicon carbide crystal manufacturing apparatus (9) includes a cylinder (5), a dope ingot (7) and a flat plate (6), and can stabilize and control the provision of a dope agent. Although this member does not participate in the reaction in the growth chamber, it maintains its effect during the growth process, and finally a semi-insulating, uniform silicon carbide single crystal is obtained. [Selection diagram] Fig. 1 |