| abstract |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device. SOLUTION: A gate electrode, a gate insulating film on the gate electrode, a semiconductor film provided at a position where the gate insulating film is sandwiched between the gate electrodes and the gate electrode, a source electrode and a drain electrode in contact with the semiconductor film, and a semiconductor. It has a film, a source electrode, and an oxide film on the drain electrode, and the end of the semiconductor film and the end of the source electrode or drain electrode in the region overlapping the semiconductor film are The semiconductor film and the oxide film have metal oxides containing In, Ga, and Zn, and the oxide film is a semiconductor having an atomic number ratio of In lower than that of the semiconductor film. apparatus. [Selection diagram] Fig. 1 |