| abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor device having good performance. A semiconductor device including a semiconductor layer 11, a semiconductor layer 21 overlapping the semiconductor layer 11, and a wiring structure 30 arranged between the semiconductor layer 11 and the semiconductor layer 21. Is provided with a P-type MIS transistor PMa, the direction HKa in which the young ratio of the semiconductor layer 11 is high in the direction along the main surface of the semiconductor layer 11, and the direction SDa in which the source Sa and drain Da of the P-type MIS transistor are aligned. The angle formed by and is greater than 30 degrees and less than 60 degrees. [Selection diagram] Fig. 3 |