http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021086943-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
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filingDate 2019-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c21364f1fab1cd2b90456c96e3fc39a0
publicationDate 2021-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2021086943-A
titleOfInvention Etching liquid
abstract PROBLEM TO BE SOLVED: To provide an etching solution capable of improving the ratio of an etching rate of a silicon nitride film to a silicon oxide film in one aspect. According to one embodiment, the present disclosure is an etching solution for a step of removing a silicon nitride film from a substrate having a silicon nitride film and a silicon oxide film, and contains a silicon compound, phosphoric acid, and water. The degree of polymerization of the silicon compound is 2 or more and 4000 or less, and the degree of polymerization is the weight of the silicon compound after adjusting the pH of an alkaline aqueous solution containing the silicon compound to 0.5 and storing it at 165 ° C. for 2 hours. The present invention relates to an etching solution, which is a value obtained by dividing the average molecular weight by the weight average molecular weight of a silicon compound in an alkaline aqueous solution having a pH of 12. [Selection diagram] None
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priorityDate 2019-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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