http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021077910-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdf3b6ced3d7710ec0bc0addb67a1cc9 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8239 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1156 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate | 2021-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a00921d4367904ce65ed86a9ee3a3081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68ff1032c32c3e4887408bbdc2711187 |
| publicationDate | 2021-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2021077910-A |
| titleOfInvention | Transistor |
| abstract | PROBLEM TO BE SOLVED: To reduce oxygen deficiency existing in an oxide semiconductor film and in the vicinity of the oxide semiconductor film, and to improve the electrical characteristics of a transistor using the oxide semiconductor film. A semiconductor device using a gate electrode having a Gibbs free energy of an oxidation reaction higher than that of a gate insulating film. In the region where the gate electrode is in contact with the gate insulating film, oxygen moves from the gate electrode to the gate insulating film due to the higher Gibbs free energy of the oxidation reaction than the gate insulating film, and the oxygen causes the gate insulating film. Oxygen deficiency in the oxide semiconductor film and in the vicinity of the oxide semiconductor film can be reduced by transmitting the oxygen to the oxide semiconductor film provided in contact with the gate insulating film. [Selection diagram] Fig. 1 |
| priorityDate | 2011-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 67.