| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bb4ae410da4be8184239adc5ab1c0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate |
2020-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44b3dd9b1d61f4c34c4472de2539c274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01f00616b66f2e7c1c0a79e22df8c9f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_675b118f27456c6c17a93317ae5f0ec7 |
| publicationDate |
2021-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2021061414-A |
| titleOfInvention |
Si precursor for vapor deposition of SiN at low temperature |
| abstract |
PROBLEM TO BE SOLVED: To provide vapor deposition of a silicon nitride film having desirable properties (good step coverage and pattern loading effect and desirable etching characteristics. A method for forming a silicon nitride thin film by a thermal atomic layer deposition (ALD) process, wherein a vapor-phase silicon reactant is introduced into a reaction space in order to adsorb a silicon precursor on a substrate surface. It includes a step of removing the excess silicon reactant, a step of contacting the adsorbed silicon reactant with the reactants generated from the nitrogen precursor by plasma, and a step of removing the excess reactants and reaction by-products. These steps are repeated to obtain a silicon nitride film of the desired thickness. [Selection diagram] Fig. 4 |
| priorityDate |
2013-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |