http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021038112-A

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filingDate 2019-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d0620c9bf723ee9d2202cabc1336321
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publicationDate 2021-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2021038112-A
titleOfInvention Laminated structures, semiconductor devices and semiconductor systems
abstract 【Task】 An object of the present invention is to provide a laminated structure having a crystalline oxide film having a beta-gallian structure, which is excellent in mobility and is thermally stable and suitable for a semiconductor device. SOLUTION: A laminated structure having a substrate and a crystalline oxide film having a beta-gallian structure, wherein the substrate is a single crystal substrate containing lithium tantalate as a main component, and the crystalline oxide film contains a dopant. A laminated structure having a mobility of 30 cm 2 / Vs or more. [Selection diagram] Fig. 1
priorityDate 2019-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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