http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021019182-A

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filingDate 2020-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2021-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2021019182-A
titleOfInvention All-around channel type semiconductor device and its manufacturing method
abstract PROBLEM TO BE SOLVED: To provide an all-around channel type semiconductor device and a method for manufacturing the same. A semiconductor device includes a plurality of gate structures and multiple access channel layers. The gate structures have the same stretching direction, and each of the gate structures has a first end and a second end facing each other. Since all the gate structures are surrounded by the multiple connection channel layers and the plane direction of the multiple connection channel layers is perpendicular to the above-mentioned stretching direction, the channels of the gate structure are connected to each other. [Selection diagram] Fig. 1
priorityDate 2019-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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