http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020523621-A

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filingDate 2018-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2020523621-A
titleOfInvention Epsilon near-zero absorber with adjustable field effect
abstract The present disclosure provides systems and methods for tunable ENZ materials that can vary the absorption of radiant energy. The tunable ENZ material can serve as a broadband absorber, which characteristically uses a stack of ultra-thin conductive layers with a dielectric constant of the epsilon near zero (ENZ) regime at different wavelengths. The conductive material comprises an at least partially transparent conductive oxide layer or a transition metal nitride layer having different electron concentrations and therefore different ENZ frequencies for absorbing energy in a wide band range. You can This layer is directly tunable to various frequencies to achieve high levels of absorption with deep sub-wavelength ENZ thickness. The applied electrical bias forms an electrical storage/depletion region in the ENZ semiconductor device and controls the plasma frequency, thus allowing a high level of absorption in the device. Furthermore, for stacks of layers, the carrier concentration can vary from layer to layer.
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