| abstract |
A cleaning composition and method for cleaning post chemical mechanical polishing (CMP) residues and contaminants from a microelectronic device having the residues and contaminants thereon. The composition provides highly effective cleaning of post-CMP residue and contaminant materials from the surface of microelectronic devices without compromising the low-k material or copper interconnect material. Further, the cleaning composition is compatible with ruthenium containing materials. [Selection diagram] None |