| abstract |
The present invention provides a photonic integrated device. The substrate includes a two-dimensional material unit and a semiconductor light emitting unit located on both sides of the two-dimensional material unit on the substrate. The two-dimensional material unit has an emission wavelength band longer than the emission wavelength band of the semiconductor light emitting unit. The material is installed and the semiconductor light emitting unit provides a pumping light source to the two-dimensional material unit to pump the light emitting two-dimensional material to emit light. The photonic integrated device of the present invention acquires different emission wavelength bands by changing the number or types of layers of the light emitting two-dimensional material, and at the same time, the photonic integrated device of the present invention adopts a light emitting system by optical pumping, The difficulty of the process is simplified as compared with the light emitting method by electrical pumping in which the pn junction is formed based on the light emitting two-dimensional material in the related art without the need to form the pn junction. The present invention further provides a method for manufacturing the above photonic integrated device. The manufacturing method is easy to realize process standardization, is compatible with the conventional manufacturing process of semiconductor devices, reduces the manufacturing cost, and is advantageous for mass production. |