| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01P7-082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02697 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B32-182 |
| filingDate |
2017-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2020-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2020515039-A |
| titleOfInvention |
Graphene semiconductor design method |
| abstract |
PROBLEM TO BE SOLVED: To provide a design method of a graphene semiconductor applying a Doppler effect. According to the present invention, a semiconductor made of a graphene material is designed by changing ω of each frequency and an effective heritability ε_eff of a plasmon medium by a resonator, and a metamaterial is formed by changing a feeding direction of the plasmon medium. Then, a graphene semiconductor designing method is provided, wherein the graphene semiconductor is integrated by generating a surface plasmon resonance phenomenon. [Selection diagram] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114355490-A |
| priorityDate |
2017-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |