| abstract |
The microelectronic device (200) is formed by forming a platinum-containing layer (220) on the substrate (202) of the microelectronic device (200). A cap layer (232) is formed on the platinum-containing layer (220) such that there is no platinum oxide at the interface between the cap layer (232) and the platinum-containing layer (220). The cap layer (232) is etchable in an etchant that also etches the platinum-containing layer (220). The cap layer (232) may be formed on the platinum-containing layer (220) before the platinum oxide forms on the platinum-containing layer (220). Alternatively, the platinum oxide on the platinum containing layer (220) may be removed before forming the cap layer (232). Platinum-containing layer (220) may be used to form platinum silicide (226). The platinum-containing layer (220) may be patterned by forming a hard mask or masking platinum oxide (264) on a portion of the top surface of the platinum-containing layer (220) to block wet etchants. |