http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020200235-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c8d4dc7bd1a30d8fda907fceaeb4e69 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 |
| filingDate | 2020-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3d5114244bfb499307c4cca6f04f506 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_136da8151a38d009aae89e7091642fc9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_969664276c0643b24594a89561f30b32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1d6623c33a8491243e3a4d6c8b10399 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fab4ef92790bab93ebf94ab6191f1d47 |
| publicationDate | 2020-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2020200235-A |
| titleOfInvention | C-plane GaN substrate |
| abstract | PROBLEM TO BE SOLVED: To provide a novel C-plane GaN substrate used for manufacturing a nitride semiconductor device and a bulk nitride semiconductor crystal, and a method for manufacturing the same. SOLUTION: A pattern mask having a periodic opening pattern composed of linear openings is arranged on a polar surface of a GaN seed, and the GaN crystal is grown amonothermally through the pattern mask to form a pattern with the GaN crystal. A method for manufacturing a C-plane GaN substrate 10 in which a gap is formed between the mask and the GaN crystal, the GaN crystal is further grown in the C-axis direction, and then the GaN crystal is processed to obtain the C-plane GaN substrate 10. On the virtual line segments LS1 and LS2 with a length of 40 mm drawn on the main surface of the C-plane GaN substrate 10, the X-ray incident surface at the time of ω scanning is made parallel to each line segment, and the reflected XRC is performed (004). A C-plane GaN substrate in which the maximum value of XRC FWHM between all measurement points is less than 30 arcsec and the difference between the maximum value and minimum value of the XRC peak angle is less than 0.2 ° when measured at 1 mm intervals. 10. [Selection diagram] Fig. 3 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023189872-A1 |
| priorityDate | 2020-09-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.