| abstract |
PROBLEM TO BE SOLVED: To provide an imaging device having excellent imaging performance. A first layer, a second layer, and a third layer each have an overlapping region. The first layer and the second layer each have a transistor, the third layer has a photoelectric conversion element, and the off-current of the transistor formed in the first layer is formed in the second layer. The electric field effect mobility of the transistor formed in the second layer is smaller than that of the transistor formed in the first layer, and is larger than that of the transistor formed in the first layer. [Selection diagram] Fig. 1 |