http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020184010-A

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filingDate 2019-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ccf0884117b3286a18d0d296be85129
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publicationDate 2020-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2020184010-A
titleOfInvention Radiation-sensitive compositions, insulating films for display devices, display devices, methods for forming insulating films for display devices, and silsesquioxane.
abstract PROBLEM TO BE SOLVED: To obtain a cured film having sufficient lithography performance and having sufficient etching chemical solution resistance and oxygen ashing resistance even by heating at a relatively low temperature (for example, 120 ° C. or lower), radiation-sensitive composition, radiation-sensitive. An insulating film for a display device and a display device obtained by using a sex composition, a method for forming an insulating film for a display device using a radiation-sensitive composition, and silsesquioxane suitable as a component of the radiation-sensitive composition. provide. SOLUTION: A silsesquioxane having a first structural unit represented by the formula (1) and a second structural unit represented by the formula (2), a radiation-sensitive radical polymerization initiator, and an organic solvent. It is a radiation-sensitive composition containing. In formula (1), X is a monovalent organic group having an unsaturated double bond. [Selection diagram] Fig. 1
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