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filingDate 2019-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aabc9cadc00caa1550189238a8ff8817
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publicationDate 2020-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2020174153-A
titleOfInvention Manufacturing method of gallium oxide semiconductor film
abstract 【Task】 It is an object of the present invention to provide a method for producing a gallium oxide semiconductor film by a mist CVD method, which can obtain a high quality gallium oxide semiconductor film having excellent crystallinity and the like with high productivity. SOLUTION: A gallium oxide semiconductor film in which a mist generated by atomizing or dropletizing a raw material solution is conveyed using a carrier gas, the mist is heated, and the mist is thermally reacted on a substrate to form a film. A method for producing a gallium oxide semiconductor film, wherein the hydrogen ion concentration in the raw material solution is 1 × 10 -12 to 1 × 10 −2 mol / L. [Selection diagram] Fig. 1
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Total number of triples: 43.