| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7098017ee36d1bee7e75d86c6a8b839d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-2442
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2223-611
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2223-07 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N23-20091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2019-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74e27afadde7413c55d05d2aa9be0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9658a6a4d718ce1a69d93c1ceaf5104b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7df45cc37ee20bfa185f2818053998de |
| publicationDate |
2020-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2020167235-A |
| titleOfInvention |
Semiconductor device |
| abstract |
PROBLEM TO BE SOLVED: To realize a highly reliable semiconductor device. A semiconductor device includes an oxide semiconductor layer containing indium, a gate electrode facing the oxide semiconductor layer, a gate insulating layer between the oxide semiconductor layer and the gate electrode, and the oxide. It has a first electrode in contact with the oxide semiconductor layer from above the semiconductor layer. Indium is unevenly distributed in the oxide semiconductor layer in the region overlapping the first electrode in a plan view. The gate electrode and the gate insulating layer may be provided below the oxide semiconductor layer. [Selection diagram] Fig. 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022176484-A1 |
| priorityDate |
2019-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |