| abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor device suitable for miniaturization and high density. SOLUTION: A first transistor, a first insulating film on the first transistor, a second insulating film on the first insulating film, and a second transistor on the second insulating film. It has a first conductive film that is electrically connected to the first transistor, a first conductive film and a second conductive film that is electrically connected to the second transistor, and the first conductive film is a first conductive film. The second conductive film penetrates the first insulating film, the second conductive film penetrates the second insulating film, the semiconductor film of the second transistor, and the source electrode or drain electrode, and the channel forming region of the first transistor is a single crystal. A semiconductor device having a semiconductor, the channel forming region of the second transistor having an oxide semiconductor, and the width of the bottom surface of the second conductive film being 5 nm or less. [Selection diagram] Fig. 1 |