| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3b0a3dbf8d6c9712d86ea1383fd5327 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3244 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-083 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
| filingDate |
2020-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8ba6da9b1492089a917cb551b8e9d71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20c4f3dab1062017204174bb877de30e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25febe17def09226487025f248ef6d40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fafc478eb752c97d0777d9ee26d1c37 |
| publicationDate |
2020-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2020153014-A |
| titleOfInvention |
Tungsten oxide sputtering target |
| abstract |
PROBLEM TO BE SOLVED: To provide a tungsten oxide sputtering target capable of suppressing the occurrence of abnormal discharge even if sputtering progresses and stably performing sputtering deposition for a long period of time. SOLUTION: A peak of W 18 O 49 is confirmed by X-ray diffraction analysis on a sputter surface and a cross section orthogonal to the sputter surface, and the diffraction intensity I of the (103) plane of W 18 O 49 on the sputter surface. S (103) and (010) diffraction intensity of the plane I S (010) ratio of I S (103) / I S (010) is 0.38 or less, the W 18 O 49 in the cross section (103) the diffraction intensity of the plane I C (103) (010) diffraction intensity of the plane I C (010) ratio of I C (103) / I C (010) are 0.55 or more, parallel to the sputter surface It is characterized in that the area ratio of W 18 O 49 phase is 37% or more. [Selection diagram] None |
| priorityDate |
2019-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |