| abstract |
PROBLEM TO BE SOLVED: To provide a film forming technique for forming an oxide semiconductor film. SOLUTION: An oxide semiconductor film is used by using a sputtering target containing a sintered body of a metal oxide and having a hydrogen content of the sintered body of the metal oxide as low as, for example, less than 1 × 10 16 atoms / cm 3. by forming a compound containing a hydrogen atom as represented by H 2 O, or an oxide semiconductor film containing a small amount of impurities such as hydrogen atoms. Further, this oxide semiconductor film is applied as an active layer of a transistor. [Selection diagram] Fig. 1 |