| abstract |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having a stable connection shape between bump electrodes of laminated semiconductor elements and capable of removing an oxide film at a contact interface with the bump electrodes. According to an embodiment, a laminate is formed by temporarily fixing a solder bump of a first semiconductor element and a second bump electrode of a second semiconductor element. Next, the temperature inside the furnace is set to a temperature equal to or higher than the reduction temperature of the carboxylic acid and lower than the melting temperature of the solder bumps, and the inside of the furnace is set to the concentration of the first carboxylic acid gas. Then, while raising the temperature in the furnace until it reaches the melting temperature, the concentration in the furnace is adjusted to the second carboxylic acid gas concentration. Then, the temperature in the furnace is maintained at a temperature equal to or higher than the melting temperature to melt the solder bumps. The second carboxylic acid gas concentration is lower than the first carboxylic acid gas concentration and is a concentration containing the minimum carboxylic acid gas capable of reducing the oxide film of the solder bump. When the temperature in the furnace reaches the melting temperature, at least the inside of the furnace has a second carboxylic acid gas concentration. [Selection diagram] Fig. 5 |