| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fb272959740a2231f287ac6bf4d190a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 |
| filingDate |
2019-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2d3b27ecb0292cc12721d1c195654f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac03b2627c4d407ab2fd84875953977c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dd3dfd0df989c28f0c405ec738dfede |
| publicationDate |
2020-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2020145244-A |
| titleOfInvention |
Semiconductor device manufacturing methods, substrate processing devices and programs |
| abstract |
PROBLEM TO BE SOLVED: To control stress of a film formed on a substrate. SOLUTION: Under a first temperature, a step of supplying a raw material containing a cyclic structure composed of silicon and carbon and halogen to a substrate, and a step of supplying a nitride to the substrate. By performing the non-simultaneous cycle of the above a predetermined number of times, a step of forming a first film containing a cyclic structure and nitrogen on the substrate and (b) supplying an oxidizing agent to the substrate under a second temperature. The third film in (c) has a step of converting the first film into a second film containing a cyclic structure and oxygen, and (c) a step of annealing the second film under a third temperature. By controlling the temperature, the stress of the second membrane is controlled. [Selection diagram] Fig. 4 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021117484-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-4074176-A1 |
| priorityDate |
2019-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |