| abstract |
PROBLEM TO BE SOLVED: To improve controllability of an in-plane film thickness distribution of a film formed on a substrate. SOLUTION: In a gas supply system of a substrate processing apparatus, a processing furnace 202 has a first storage unit for temporarily storing a first processing gas, a second storage unit for temporarily storing a first processing gas, and a second storage unit. The first gas supply port 411 that supplies the first processing gas stored in the first storage unit from the outer periphery of the substrate toward the center of the substrate, and the first treatment gas stored in the second storage unit. A second gas supply port 421 is provided so as to be supplied from the outer periphery of the substrate toward the outer periphery of the substrate rather than from the outer periphery of the substrate toward the center of the substrate. [Selection diagram] Fig. 2 |