| abstract |
Provided is a semiconductor device having good electrical characteristics. An oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator, the first insulator having excess oxygen, The second insulator has a function of trapping or fixing hydrogen, hydrogen in the oxide semiconductor is bonded to excess oxygen, and hydrogen bonded to excess oxygen passes through the first insulator and The excess oxygen trapped or fixed to the second insulator and bonded to hydrogen remains in the first insulator as excess oxygen. [Selection diagram] Figure 1 |