http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020113570-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-365 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-208 |
| filingDate | 2019-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_473ec7dbaf937c3798f563773d0f33d1 |
| publicationDate | 2020-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2020113570-A |
| titleOfInvention | Oxide semiconductor film, laminate, and method for manufacturing oxide semiconductor film |
| abstract | 【Task】 An object is to provide an oxide semiconductor film containing gallium as a main component which is excellent in ohmic characteristics. [Solution] An oxide semiconductor film containing gallium as a main component, wherein the specular reflectance of the surface of the oxide semiconductor film is 15% or less under conditions of an incident light wavelength of 633 nm and an incident angle of 45°. [Selection diagram] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023053817-A1 |
| priorityDate | 2019-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.