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publicationDate 2020-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2020096089-A
titleOfInvention Semiconductor device manufacturing method, surface treatment method, substrate treatment apparatus, and program
abstract PROBLEM TO BE SOLVED: To improve the quality of substrate processing performed in a processing container. SOLUTION: (a) A step of supplying a source gas to a substrate in a processing container from a metal first pipe and a first nozzle, and a step of supplying a metal second to a substrate in the processing container. A cycle including a step of supplying an oxygen-containing gas from the pipe and the second nozzle and a step of supplying a nitrogen- and hydrogen-containing gas to the substrate in the processing container from the second pipe and the second nozzle is predetermined. By performing the process a number of times, the step of forming a film on the substrate and (b) supplying the fluorine-containing gas into the second pipe chemically reacts the fluorine-containing gas with the inner surface of the second pipe. And a step of forming a continuous fluorine-containing layer on the inner surface of the second pipe. [Selection diagram] Figure 4
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