| abstract |
Provided is a solid-state imaging device capable of realizing a smaller size such as a further reduction in height, a higher speed of wiring, and a higher density of wiring. A solid-state imaging device 1000 includes a semiconductor layer 20 provided with a photoelectric conversion unit that photoelectrically converts incident light and a through via 205, and a first connection on a surface side of the semiconductor layer that receives the light. A first semiconductor element 1006 having a portion 202a and a second connection portion 201a, and a connection wiring connecting the first connection portion, the second connection portion and the through via 205, and the first semiconductor element by the first connection portion. And second semiconductor elements 1001 and 1003 mounted on the second semiconductor element and are connected to the external terminal by the second connection portion. [Selection diagram] Figure 1 |