| abstract |
PROBLEM TO BE SOLVED: To provide a resist composition capable of improving a lithography property such as reduction of roughness and forming a resist pattern having a good shape, and a method of forming a resist pattern using the resist composition. A resist composition which generates an acid upon exposure and whose solubility in a developing solution is changed by the action of an acid, wherein the solubility of the developing solution in a developing solution is changed by the action of an acid. And an acid generator component (B) that generates an acid upon exposure, and an organic acid having at least one carboxy group, and the acid generator component (B) is represented by the following general formula (b1). A resist composition comprising the compound (B1) represented. In the formula, R 2011 to R 2031 are an aryl group, an alkyl group, or an alkenyl group. However, R 2011 to R 2031 as a whole have four or more substituents containing a fluorine atom. X n− is an n-valent anion, and n is an integer of 1 or more. [Chemical 1] [Selection diagram] None |