http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020075839-A

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filingDate 2018-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6351273e20929e9b6ed7731d3e0ca9e8
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publicationDate 2020-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2020075839-A
titleOfInvention SiC substrate for growth of gallium nitride compound semiconductor
abstract PROBLEM TO BE SOLVED: To provide a SiC substrate used for growth of a gallium nitride based compound semiconductor, which has a high processing speed in chemical polishing and is suitable for productivity and process stability. SOLUTION: In a SiC substrate for growing a gallium nitride compound semiconductor for an electronic device, the epitaxyal growth surface of the substrate is set to a surface whose off angle is limited with respect to the Silicon surface of the C surface. It is characterized by improving the processing speed of SiC substrates for gallium nitride based compound semiconductors used in devices and electronic devices, and at the same time improving the flatness of the epitaxially grown gallium nitride based compound semiconductor surface and expanding the terrace length. .. [Selection diagram] Fig. 1
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Total number of triples: 29.