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filingDate 2019-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2020058041-A
titleOfInvention Semiconductor device
abstract An operation speed of a circuit is improved. A first transistor has a function of setting the potential of the gate of the first transistor to a value at which the first transistor is turned on, the first terminal being connected to the gate of the first transistor. A second transistor, a third transistor having a function of setting the potential of the gate of the second transistor to a value at which the second transistor is turned on, and having a function of floating the gate of the second transistor; A fourth transistor having a function of setting the potential of the gate of the transistor to a value at which the second transistor is turned off. With such a structure, the potential difference between the gate and the source of the second transistor can be maintained at a value larger than the threshold voltage of the second transistor, so that operation speed can be improved. [Selection diagram] Fig. 1
priorityDate 2014-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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