| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1605 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-42 |
| filingDate |
2018-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e7b874431fb9fc91fa0ab7defeacf91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7d2d4d68524e7184b3ea2ae8520e95e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad792186e8556b76d0ceee202e523c39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c00ca2cfae78f4eb24fb0d2c48794ea5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccc149d0df92cb850509d6edb16e4d0d |
| publicationDate |
2020-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2020053520-A |
| titleOfInvention |
Method for forming porous layer, method for etching, method for manufacturing article, method for manufacturing semiconductor device, and plating solution |
| abstract |
An object of the present invention is to prevent particles containing a noble metal from adhering to an undesired position as a porous layer containing a noble metal is formed. A method for forming a porous layer includes forming a porous layer containing a noble metal on a surface made of a semiconductor by displacement plating. The plating solution used for displacement plating contains a noble metal source that generates ions containing a noble metal in water, hydrogen fluoride, and a regulator that adjusts the pH value or zeta potential, and has a pH value in the range of 1 to 6. It is in. [Selection diagram] FIG. |
| priorityDate |
2018-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |