| abstract |
An object of the present invention is to provide formation of a sacrificial film having high selectivity of wet etching with respect to a movable electrode when manufacturing a cantilever structure sensor using MEMS technology. In a substrate processing apparatus, a substrate having a control electrode, a pedestal, and a counter electrode is carried into a processing chamber, and a first non-plasma state containing impurities and silicon containing impurities and silicon is introduced into the processing chamber from a first gas supply pipe. A processing gas is supplied, and a second processing gas in a plasma state containing oxygen is supplied from the second gas supply pipe 244a to the processing chamber, so that the control electrode, the pedestal, and the counter electrode contain the sacrifice containing the impurity. Form a film. [Selection diagram] FIG. |