| abstract |
An object of the present invention is to provide a semiconductor device having a configuration capable of suppressing a decrease in electrical characteristics which is conspicuous with miniaturization. A first oxide semiconductor film over an insulating surface, a second oxide semiconductor film over the first oxide semiconductor film, and a third oxide semiconductor over the second oxide semiconductor film A film, a source electrode and a drain electrode which are in contact with side surfaces of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film, and an upper surface of the third oxide semiconductor film; The semiconductor device includes a gate insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a gate electrode which is in contact with the gate insulating film and faces the top surface and side surfaces of the second oxide semiconductor film. [Selection diagram] Fig. 1 |