http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020044708-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_669c01133740c5233f2c8738904ea3af |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B65D65-40 |
filingDate | 2018-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf8aecde3cdeb520cdb91304341a4db1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f8d23872fdd6e0d19c5f20aae6eb338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_131c68348eb7bae5de77362855623e36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a6c3622d9a0b6dfcb98c7f3bebf9519 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_825615de05942e18f43f118dabe0d285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9a971273cb725d93fb6a804aa85aa80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_645fbb8afef8ebd10c4d042a35ad74f1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf46ce04f4d26de35a67d240e1fc1cb1 |
publicationDate | 2020-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2020044708-A |
titleOfInvention | Gas barrier vapor deposition film, gas barrier laminate, gas barrier packaging material, and gas barrier packaging. |
abstract | An object of the present invention is to provide a gas barrier vapor deposition film excellent in gas barrier properties without using a multilayer structure as in the prior art, and a laminate, a packaging material, and a package using the gas barrier vapor deposition film. To provide. A gas-barrier vapor-deposited film including a substrate layer made of a resin film and an inorganic oxide vapor-deposited film layer containing aluminum oxide as a main component, wherein the inorganic oxide vapor-deposited film layer comprises A substance represented by Al 2 O 4 H is distributed on the inorganic oxide vapor-deposited film layer, and the time-of-flight secondary ion mass spectrometry of the inorganic oxide vapor-deposited film layer is formed on the inorganic oxide vapor-deposited film layer. A gas-barrier vapor-deposited film, wherein the maximum intensity ratio Al 2 O 4 H / Al 2 O 3 in the method (TOF-SIMS) is 0.18 or more and 0.70 or less. [Selection diagram] Fig. 1 |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3769955-A4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7355958-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7355957-B1 |
priorityDate | 2018-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 151.