| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f3518dca003902d9f332ad08ac9a6ffe |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14689 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14643
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14641
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04N25-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14638
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1461 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-3745
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-369
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146 |
| filingDate |
2018-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bb76df7efcc444e391551f20282d749
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5259903bb0e82ea35388f29e3a3c057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_183770858d6c548c69734266e26de467
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0ca47e7aa9cfe9bc17b4f3cc6e5e300
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_068521bc48035ebea28b7cb4ba668f7a |
| publicationDate |
2020-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2020038910-A |
| titleOfInvention |
Solid-state imaging device and electronic device |
| abstract |
A solid-state imaging device that detects visible light and ultraviolet light within one pixel has improved resolution. In a solid-state imaging device, a first photodiode (41) and a second photodiode (42) perform photoelectric conversion on incident light, respectively. The first accumulation unit 43 accumulates the charge photoelectrically converted by the first photodiode. The second accumulation unit 44 is arranged on one surface of the semiconductor substrate 40 and accumulates electric charges photoelectrically converted by the second photodiode. The conductor 46 is connected to the second storage unit, and transfers the charge stored in the second storage unit to the other surface of the semiconductor substrate. [Selection diagram] Fig. 1 |
| priorityDate |
2018-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |