| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01074 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-303 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-08 |
| filingDate |
2018-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f446a9e1f0b71ae71fb126eb5645b1e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f92cba180db29f37aa7cd50cdc4699b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8659b09931397c648360957044c96e4a |
| publicationDate |
2020-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2020033630-A |
| titleOfInvention |
Film forming method and film forming system |
| abstract |
An object of the present invention is to reduce the stress of a metal layer while reducing the resistance of the metal layer even when it is made thin. The method includes forming a cancel layer on a substrate on which a base film is formed in a processing chamber and canceling the orientation of the base film in a reduced-pressure atmosphere. Supplying a metal material gas and a boron-containing gas to the substrate on which is formed an initial film forming step of forming an initial film of metal; and forming a main film of metal on the substrate on which the initial film is formed. And a film formation step. [Selection diagram] FIG. |
| priorityDate |
2018-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |